Gigahertz surface acoustic wave generation on ZnO thin films deposited by radio frequency magnetron sputtering on III-V semiconductor substrates
نویسندگان
چکیده
The authors demonstrate 1.6 GHz surface acoustic wave SAW generation using interdigital transducers patterned by e-beam lithography on a thin ZnO piezoelectric film deposited on an InP substrate. The highly oriented, dense, and fine-grain ZnO film with high resistivity was deposited by radio frequency magnetron sputtering and was characterized by x-ray diffraction, scanning electron microscopy, atomic force microscopy, and a four-point probe station. The acoustic wavelength of the 1.6 GHz SAW generated by exciting the interdigital transducer on ZnO / InP with a microwave signal is 1.6 m. This SAW filter device could be monolithically integrated with optoelectronic devices, opening new opportunities to use SAWs for applications such as gigahertz-frequency filters on optoelectronic devices and novel widely tunable quantum cascade lasers. © 2008 American Vacuum Society. DOI: 10.1116/1.2993176
منابع مشابه
Characteristics of ZnO thin films prepared by radio frequency magnetron sputtering
We investigated in this study structural and nanomechanical properties of zinc oxide (ZnO) thin films deposited onto Langasite substrates at 200 C through radio frequency magnetron sputtering with an radio frequency power at 200 W in an O2/Ar gas mixture for different deposition time at 1, 2, and 3 h. Surface morphologies and crystalline structural characteristics were examined using X-ray diff...
متن کاملMorphological, structural and photoresponse characterization of ZnO nanostructure films deposited on plasma etched silicon substrates
ZnO nanostructure films were deposited by radio frequency (RF) magnetron sputtering on etched silicon (100) substrates using dry Ar/SF6 plasma, at two etching times of 5 min and 30 min, and on non etched silicon surface. Energy dispersive X-ray (EDX) technique was employed to investigate the elements contents for etched substrates as well as ZnO films, where it is found to be stoichiometric. Su...
متن کاملEnhanced Physical Properties Of Indium Tin Oxide Films Grown on Zinc Oxide-Coated Substrates
Structural, electrical and optical properties of indium tin oxide or ITO (In2O3:SnO2) thin films on different substrates are investigated. A 100-nm-thick pre-deposited zinc oxide (ZnO) buffer layer is utilized to simultaneously improve the electrical and optical properties of ITO films. High purity ZnO and ITO layers are deposited with a radio frequency sputtering in argon ambient with plasma p...
متن کاملOptical and electrical properties of ZnO doped thin films doped with Al, V and Nb
This study addresses the optical and electrical properties of ZnO thin films doped with Al, V and Nb (ZnO:Al, ZnO:V and ZnO:Nb, respectively) deposited by r.f. magnetron sputtering in Ar atmosphere. The films are deposited on glass substrates without heating and heated at 100C, 150C and 275C. The optical spectra of transmittance and reflectance are measured and the optical band gap of the films...
متن کاملPhysical properties of metal-doped zinc oxide films for surface acoustic wave application
Metal-doped ZnO [MZO] thin films show changes of the following properties by a dopant. First, group III element (Al, In, Ga)-doped ZnO thin films have a high conductivity having an n-type semiconductor characteristic. Second, group I element (Li, Na, K)-doped ZnO thin films have high resistivity due to a dopant that accepts a carrier. The metal-doped ZnO (M = Li, Ag) films were prepared by radi...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2008